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IGLD60R190D1S Infineon (https://www.infineon.com/) Power Transistor

Title N채널 600V 10A(Tc) 62.5W(Tc) 표면 실장 PG-LSON-8-1
Description IGLD60R190D1S IGLD60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC Standards Benefits  Improves system effici...
Features
 Enhancement mode transistor
  – Normally OFF switch
 Ultra fast switching
 No reverse-recovery charge
 Capable of reverse conduction
 Low gate charge, low output charge
 Superior commutation ruggedness
 Qualified for standard grade applications according to JEDEC Standards Benefits
 Improves system efficiency
 Improves power density
 Enabl...

Datasheet PDF File IGLD60R190D1S Datasheet - 650.11KB
Distributor Distributor
DigiKey
Stock 0 In stock
Price
3000 units: 4454.196 KRW
BuyNow BuyNow BuyNow - Manufacturer a Infineon Technologies AG IGLD60R190D1SAUMA1

IGLD60R190D1S   IGLD60R190D1S   IGLD60R190D1S  



IGLD60R190D1S Distributor

Distributor Stock Price BuyNow
Distributor
DigiKey
0
3000 units: 4454.196 KRW
Infineon Technologies AG

BuyNow
Distributor
Mouser Electronics
0
No price available
Infineon Technologies AG
Distributor
Avnet Americas
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No price available
Infineon Technologies AG




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