* Enhancement mode transistor ‑ Normally OFF switch
* Ultra fast switching
* No reverse‑recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness
* ESD (HBM/CDM) JEDEC standards Benef
IGLD65R110D2 Datasheet (806.25 KB)
IGLD65R110D2
806.25 KB
Power transistor.
Public IGLD65R110D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (ga.
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