IGW30N60H3 Datasheet - Infineon

IGW30N60H3 High speed IGBT

IGW30N60H3 Features

* TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

* co

Datasheet Details

IGW30N60H3

1.95 MB

High speed igbt.

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IGW30N60H3 IGW30N60H3 High speed IGBT Infineon

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