IGW50N65F5A Datasheet - Infineon

IGW50N65F5A - IGBT

IGW50N65F5A Features

* High speed F5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Qualified according to AEC-Q101

* Green package (RoHS compliant

Datasheet Details

IGW50N65F5A

1.90 MB

Igbt.

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