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IHW30N110R3 - IGBT

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General Description

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Overview

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N110R3 Datasheet IndustrialPowerControl ResonantSwitchingSeries IHW30N110R3.

Key Features

  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.
  • Very tight parameter distribution.
  • High ruggedness, temperature stable behavior.
  • Low VCEsat.
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat.
  • Low EMI.
  • Qualified according to JEDEC for target.

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