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IHW30N160R2 - IGBT

Key Features

  • Powerful monolithic Body Diode with very low forward voltage.
  • Body diode clamps negative voltages.
  • Trench and Fieldstop technology for 1600 V.

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Full PDF Text Transcription for IHW30N160R2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IHW30N160R2. For precise diagrams, and layout, please refer to the original PDF.

IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward vol...

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e Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution G - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications PG-TO-247-3 • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.

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