IJW120R100T1 transistor equivalent, silicon carbide-junction field effect transistor.
* Ultra fast switching
* Internal fast body diode
* Low intrinsic capacitance
* Low gate charge
* 175 °C maximum operating temperature
Gate
Drain
S.
even more efficient, compact, lighter and cooler.
IJW120R100T1
Features
* Ultra fast switching
* Internal fast.
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