IKB30N65ES5
Overview
- VCE = 650 V
- IC = 30 A
- High speed smooth switching device for hard & soft switching
- Very low V CEsat, 1.35 V at nominal current
- 650 V breakdown voltage
- Low gate charge QG
- IGBT co-packed with full rated current RAPID 1 fast antiparallel diode
- Maximum junction temperature Tvjmax = 175°C
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models: Potential applications
