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IKB30N65ES5 - IGBT

General Description

C C G E Type IKB30N65ES5 G E Package PG-TO263-3 Marking K30EES5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-17 IKB30N65ES5 TRENCHSTOP™ 5 high speed soft switching IGBT Table of contents Table of cont

Key Features

  • VCE = 650 V.
  • IC = 30 A.
  • High speed smooth switching device for hard & soft switching.
  • Very low V CEsat, 1.35 V at nominal current.
  • 650 V breakdown voltage.
  • Low gate charge QG.
  • IGBT co-packed with full rated current RAPID 1 fast antiparallel diode.
  • Maximum junction temperature Tvjmax = 175°C.
  • Pb-free lead plating; RoHS compliant.
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Pot.

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IKB30N65ES5 TRENCHSTOP™ 5 high speed soft switching IGBT TRENCHSTOP™ 5 high speed soft switching IGBT co-packed with full current rated RAPID 1 fast and soft antiparallel diode Features • VCE = 650 V • IC = 30 A • High speed smooth switching device for hard & soft switching • Very low V CEsat, 1.35 V at nominal current • 650 V breakdown voltage • Low gate charge QG • IGBT co-packed with full rated current RAPID 1 fast antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.