* C Low VCE(sat) L5 technology offering
* Very low collector-emitter saturation voltage VCEsat
* Best-in-Class tradeoff between conduction and switching losses
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Qualif
IKW30N65EL5 Datasheet (1.71 MB)
IKW30N65EL5
1.71 MB
Igbt.
IKW30N65EL5 Low VCE(sat) series fifth generation Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel dio.
📁 Related Datasheet
IKW30N65ES5 IGBT (Infineon)
IKW30N65H5 IGBT (Infineon)
IKW30N65NL5 IGBT (Infineon Technologies)
IKW30N65WR5 IGBT (Infineon)
IKW30N60DTP IGBT (Infineon)
IKW30N60H3 IGBT (Infineon Technologies)
IKW30N60T IGBT (Infineon Technologies)
IKW30N60TA IGBT (Infineon)
IKW03N120H2 HighSpeed 2-Technology (Infineon Technologies)
IKW08T120 IGBT (Infineon Technologies)
