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IKW30N65EL5 - IGBT

Infineon

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Datasheet Details

Part number	IKW30N65EL5
Manufacturer	Infineon
File Size	1.71 MB
Description	IGBT
Datasheet	IKW30N65EL5-Infineon.pdf

IKW30N65EL5 Product details

Description

. . .

Features

C Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

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Published: Feb 17, 2016 |