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IKWH40N65EH7 Datasheet - Infineon

IGBT

IKWH40N65EH7 Features

* VCE = 650 V

* IC = 40 A

* Low switching losses

* Very low collector-emitter saturation voltage VCEsat

* Very soft, fast recovery antiparallel diode

* Smooth switching behavior

* Humidity robustness

* Optimized for hard switching, two-

IKWH40N65EH7 General Description

C Type IKWH40N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K40EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-04-25 IKWH40N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology.

IKWH40N65EH7 Datasheet (1.93 MB)

Preview of IKWH40N65EH7 PDF

Datasheet Details

Part number:

IKWH40N65EH7

Manufacturer:

Infineon ↗

File Size:

1.93 MB

Description:

Igbt.
IKWH40N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 t.

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IKWH40N65EH7 IGBT Infineon

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