IKWH50N65EH7 Datasheet - Infineon

IGBT

IKWH50N65EH7 Features

* VCE = 650 V

* IC = 50 A

* Low switching losses

* Very low collector-emitter saturation voltage VCEsat

* Very soft, fast recovery antiparallel diode

* Smooth switching behavior

* Humidity robustness

* Optimized for hard switching, two-

IKWH50N65EH7 General Description

C Type IKWH50N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K50EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology.

IKWH50N65EH7 Datasheet (2.01 MB)

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Datasheet Details

Part number:

IKWH50N65EH7

Manufacturer:

Infineon ↗

File Size:

2.01 MB

Description:

Igbt.
IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 t.

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IKWH50N65EH7 IGBT Infineon

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IKWH50N65EH7 Features

IKWH50N65EH7 General Description

Datasheet Details

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Description:

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