IMBG120R026M2H Infineon Datasheet

IMBG120R026M2H Key Features

• VDSS = 1200 V at Tvj = 25°C
• IDDC = 53 A at TC = 100°C
• RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload operation up to Tvj = 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard mutation
• XT interconnection technology for best-in-class thermal performance