IMBG65R015M2H
IMBG65R015M2H is 600V G2 MOSFET manufactured by Infineon.
Features
- Ultra-lowswitchinglosses
- Benchmarkgatethresholdvoltage,VGS(th)=4.5V
- Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
- Flexibledrivingvoltageandpatiblewithbipolardrivingscheme
- Robustbodydiodeoperationunderhardmutationevents
- .XTinterconnectiontechnologyforbest-in-classthermalperformance
Benefits
- Enableshighefficiencyandhighpowerdensitydesigns
- Facilitatesgreateaseofuseandintegration
- Providesthebestpriceperformanceratioparedto Industry’smost ambitiousroadmaps
- Reducesthesize,weightandbillofmaterialsofthesystems
- Enhancessystemrobustnessandreliability
Potentialapplications
- SMPS
- Solar PVinverters
- Energystorageandbatteryformation
- UPS
- EVcharginginfrastructure
- Motordrives
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:Thesourceanddriversourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.
PG-TO263-7
Tab
1234 56 7
Drain Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Power Source Pin 3-7
Table1Key Performance Parameters
Parameter
Value
Unit
VDSSoverfull Tj,range 650
RDS(on),typ
14.5...
