IMLT65R015M2H Datasheet | Infineon

Key Features

• Ultra‑low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
• Robust body diode operation under hard mutation events
• XT interconnection technology for best‑in‑class thermal performance Benefits
• Enables high efficiency and high power density designs
• Facilitates great ease of use and integration
• Provides the best price performance ratio pared to Industry’s most ambitious roadmaps
• Reduces the size, weight and bill of materials of the systems
• Enhances system robustness and reliability Potential applications