IMW120R140M1H
IMW120R140M1H is Silicon Carbide MOSFET manufactured by Infineon.
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
Features
- Very low switching losses
Gate pin 1
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage for easy and simple gate drive
- Fully controllable dV/dt
- Robust body diode for hard mutation
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential applications
- Energy generation o Solar string inverter and solar optimizer
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