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IMW120R140M1H - Silicon Carbide MOSFET

IMW120R140M1H Description

IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET .

IMW120R140M1H Features

* Very low switching losses Gate pin 1
* Threshold-free on state characteristic
* Wide gate-source voltage range
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* 0V turn-off gate voltage for easy and simple gate drive
* Fully controllable dV/dt
* Robust body

IMW120R140M1H Applications

* Energy generation o Solar string inverter and solar optimizer
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Drain pi

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