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IMW120R140M1H - Silicon Carbide MOSFET

Product Overview

Infineon

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IMW120R140M1H Silicon Carbide MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMW120R140M1H

Datasheet Details

Part number	IMW120R140M1H
Manufacturer	Infineon
File Size	1.10 MB
Description	Silicon Carbide MOSFET
Datasheet	IMW120R140M1H Datasheet
Additional preview pages of the IMW120R140M1H datasheet.

Product details

Features

Very low switching losses Gate pin 1.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling e.

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Published: Jul 2, 2020 |