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IPA60R060P7 - Power-Transistor

General Description

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Key Features

  • Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness.
  • Significant reduction of switching and conduction losses.
  • Excellent ESD robustness >2kV (HBM) for all products.
  • Better RDS(on)/package products compared to competition enabled by a  low RDS(on).
  • A (below 1Ohm.
  • mm²) Benefits.
  • Ease of use and fast design-in through low ringing tendency and usage  across PFC and PWM stages.
  • Simplified ther.

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Full PDF Text Transcription for IPA60R060P7 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPA60R060P7. For precise diagrams, and layout, please refer to the original PDF.

IPA60R060P7 MOSFET 600VCoolMOSªP7PowerDevice TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingto...

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narytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.