IPA60R060C7
IPA60R060C7 is MOSFET manufactured by Infineon.
Features
- Suitableforhardandsoftswitching(PFCandhighperformance LLC)
- Increased MOSFETdv/dtruggednessto120V/ns
- Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg
- Bestinclass RDS(on)/package
Benefits
- Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application
- Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
- Enablinghighersystemefficiencybylowerswitchinglosses
- Increasedpowerdensitysolutionsduetosmallerpackages
- Suitableforapplicationssuchasserver,teleandsolar
- Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto low Eossand Qg
Potentialapplications
PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar.
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
60 mΩ
Qg.typ
68 n C
ID,pulse
ID,continuous @ Tj<150°C 54
Eoss@400V
µJ
Body diode di/dt
A/µs
Type/Ordering Code IPA60R060C7
Package PG-TO 220 Full PAK
Marking...