• Part: IPA60R099C7
  • Description: MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.29 MB
Download IPA60R099C7 Datasheet PDF
Infineon
IPA60R099C7
IPA60R099C7 is MOSFET manufactured by Infineon.
Description Cool MOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredby Infineon Technologies. 600VCool MOS™C7seriesbinestheexperienceoftheleading SJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwith RDS(on)- Abelow1Ohm- mm². Features - Suitableforhardandsoftswitching(PFCandhighperformance LLC) - Increased MOSFETdv/dtruggednessto120V/ns - Increasedefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg - Bestinclass RDS(on)/package - Qualifiedforindustrialgradeapplicationsaccordingto JEDEC(J-STD20 and JESD22) Benefits - Increasedeconomiesofscalebyusein PFCand PWMtopologiesinthe application - Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency - Enablinghighersystemefficiencybylowerswitchinglosses - Increasedpowerdensitysolutionsduetosmallerpackages - Suitableforapplicationssuchasserver,teleandsolar - Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto low Eossand Qg Applications PFCstagesand PWMstages(TTF,LLC)forhighpower/performance SMPSe.g.puting,Server,Tele,UPSand Solar. Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. TO-220FP Gate Pin 1 Drain Pin 2 Source Pin 3 Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 650 99 V mΩ Qg.typ ID,pulse ID,continuous @ Tj<150°C 36 Eoss@400V 4.95 n C A A µJ Body diode di/dt A/µs Type/Ordering Code...