IPA65R190C7 Datasheet | Infineon

Features - Increased MOSFETdv/dtruggedness - Betterefficiencyduetobestinclass FOMRDS(on)- Eossand RDS(on)- Qg - Bestinclass RDS(on)/package - Easytouse/drive - Pb-freeplating,halogenfreemoldpound Benefits - Enablinghighersystemefficiency - Enablinghigherfrequency/increasedpowerdensitysolutions - Systemcost/sizesavingsduetoreducedcoolingrequirements - Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitching PWMstagesfore.g.puting,Server, Tele,UPSand Solar. Productvalidation Fullyqualifiedaccordingto JEDECfor Industrial Applications Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg.typ ID,pulse Eoss@400V 700 190 23 49 2.7 V mΩ n C A µJ Body diode di/dt A/µs Type/Ordering Code IPA65R190C7 Package PG-TO220 Full PAK Marking 65C7190 PG-TO220FP Drain Pin 2 Gate Pin 1 - 1 - 1: Internal body diode Source Pin 3 Related Links see Appendix A Final Data Sheet 1 Rev.2.1,2020-02-17 650VCool MOSªC7Power Device Tableof...