IPB016N06L3
IPB016N06L3 is Power Transistor manufactured by Infineon.
- Part of the IPB016N06L3G comparator family.
- Part of the IPB016N06L3G comparator family.
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, logic level
- 100% avalanche tested
- Pb-free plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
IPB016N06L3 G
Product Summary V DS R DS(on),max ID
60 V 1.6 mΩ 180 A
Package Marking
PG-TO-263-7 016N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4)
E AS
I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R th JC=0.6 K/W the chip is able to carry 293 A. 3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180 180 720 634 ±20 250 -55 ... 175 55/175/56
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