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Infineon Technologies Electronic Components Datasheet

IPB016N06L3 Datasheet

Power Transistor

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Type
IPB016N06L3 G
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB016N06L3 G
Product Summary
V DS
R DS(on),max
ID
60 V
1.6 m
180 A
Package
Marking
PG-TO-263-7
016N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4)
E AS
I D=100 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 293 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180
180
720
634
±20
250
-55 ... 175
55/175/56
www.DRateavS.he2e.t34U.net
page 1
Unit
A
mJ
V
W
°C
2009-11-16


Infineon Technologies Electronic Components Datasheet

IPB016N06L3 Datasheet

Power Transistor

No Preview Available !

IPB016N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area5)
min.
Values
typ.
Unit
max.
-
-
0.6 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=196 µA
1.2
1.7
2.2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
3 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=100 A
-
30
300
1
100 nA
1.2
1.6 m
V GS=4.5 V, I D=50 A
-
1.6
2.7
Gate resistance
Transconductance
RG
-
1.3
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
124
248
-
-S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2009-11-16


Part Number IPB016N06L3
Description Power Transistor
Maker Infineon
PDF Download

IPB016N06L3 Datasheet PDF






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