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IPB031NE7N3 Datasheet Power Transistor

Manufacturer: Infineon

Download the IPB031NE7N3 datasheet PDF. This datasheet also includes the IPB031NE7N3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB031NE7N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

OptiMOSTM3 Power-Transistor.

Key Features

  • Optimized technology for synchronous rectification.
  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID.
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPB031NE7N3 N-Channel MOSFET INCHANGE
Infineon Technologies AG Logo IPB031NE7N3G Power-Transistor Infineon Technologies AG

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