IPB031NE7N3G Datasheet | Infineon

IPB031NE7N3 G OptiMOSTM3 Power-Transistor Features - Optimized technology for synchronous rectification - Ideal for high frequency switching and DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, normal level - 100% avalanche tested - Pb-free plating; RoHS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G Product Summary V DS R DS(on),max ID 75 3.1 100 V mΩ A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain...