• Part: IPB031NE7N3
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 245.16 KB
Download IPB031NE7N3 Datasheet PDF
Infineon
IPB031NE7N3
IPB031NE7N3 is Power Transistor manufactured by Infineon.
- Part of the IPB031NE7N3G comparator family.
OptiMOSTM3 Power-Transistor Features - Optimized technology for synchronous rectification - Ideal for high frequency switching and DC/DC converters - Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID - Very low on-resistance RDS(on) - N-channel, normal level - 100% avalanche tested - Pb-free plating; RoHS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.1 mΩ 100 A Package Marking PG-TO263-3 031NE7N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2) T C=100 °C Pulsed...