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IPB036N12N3 Datasheet Power Transistor

Manufacturer: Infineon

Download the IPB036N12N3 datasheet PDF. This datasheet also includes the IPB036N12N3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB036N12N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Overview

IPB036N12N3 G OptiMOS™3 Power-Transistor.

Key Features

  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on) Product Summary V DS R DS(on),max ID.
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies AG Logo IPB036N12N3G Power-Transistor Infineon Technologies AG

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