IPB036N12N3G
IPB036N12N3G is Power-Transistor manufactured by Infineon.
IPB036N12N3 G
OptiMOS™3 Power-Transistor
Features
- Ideal for high frequency switching and DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 120 3.6 180 V mΩ A
Type
IPB036N12N3 G
Package Marking
PG-TO263-7 036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse3) Gate source...
