IPB036N12N3 Description
IPB036N12N3 G OptiMOS™3 Power-Transistor.
IPB036N12N3 Key Features
- Ideal for high frequency switching and DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target
IPB036N12N3 Applications
- Halogen-free according to IEC61249-2-21