IPB036N12N3
IPB036N12N3 is Power Transistor manufactured by Infineon.
- Part of the IPB036N12N3G comparator family.
- Part of the IPB036N12N3G comparator family.
IPB036N12N3 G
OptiMOS™3 Power-Transistor
Features
- Ideal for high frequency switching and DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
Product Summary V DS R DS(on),max ID
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
120 V 3.6 mΩ 180 A
Type
IPB036N12N3 G
Package Marking
PG-TO263-7 036N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche...
