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Infineon Technologies Electronic Components Datasheet

IPB037N06N3 Datasheet

Power Transistor

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Type
OptiMOS3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
Product Summary
IPP040N06N3 G
V DS
R DS(on),max (SMD)
ID
60 V
3.7 mΩ
90 A
previous engineering
sample codes:
IPP04xN06N
IPI04xN06N
IPB04xN06N
IPP040N06N3 G
Package
Marking
PG-TO263-3
037N06N
PG-TO262-3
040N06N
PG-TO220-3
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
T C=25 °C2)
90
A
T C=100 °C
90
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS
I D=90 A, R GS=25 Ω
165
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
T C=25 °C
188
W
Operating and storage temperature T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
www.DataShe1e)Jt4-SUT.cDo2m0 and JESD22
2) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A.
3) See figure 3
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17


Infineon Technologies Electronic Components Datasheet

IPB037N06N3 Datasheet

Power Transistor

No Preview Available !

IPB037N06N3 G IPI040N06N3 G
IPP040N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
min.
Values
typ.
Unit
max.
-
-
0.8 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=90 µA
2
3
-V
4
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
V DS=60 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=90 A
-
V GS=10 V, I D=90 A,
-
(SMD)
RG
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=90 A
61
0.1
1 µA
10
100
1
100 nA
3.3
4 mΩ
3.0
3.7
1.3
-Ω
121
-S
www.DataSheet4U.com
Rev. 1.03
page 2
2009-12-17


Part Number IPB037N06N3
Description Power Transistor
Maker Infineon
PDF Download

IPB037N06N3 Datasheet PDF






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