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IPB037N06N3 - Power Transistor

Download the IPB037N06N3 datasheet PDF. This datasheet also covers the IPB037N06N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • for sync. rectification, drives and dc/dc SMPS.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • N-channel, normal level.
  • Avalanche rated.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB037N06N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB037N06N3 N-Channel MOSFET INCHANGE
IPB037N06N3G Power-Transistor Infineon Technologies AG
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IPB031NE7N3 N-Channel MOSFET INCHANGE
IPB031NE7N3G Power-Transistor Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
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IPB034N06L3 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G IPB037N06N3 G IPI040N06N3 G Product Summary IPP040N06N3 G V DS R DS(on),max (SMD) ID 60 V 3.
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