• Part: IPB037N06N3
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 509.99 KB
Download IPB037N06N3 Datasheet PDF
Infineon
IPB037N06N3
Features - for sync. rectification, drives and dc/dc SMPS - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - N-channel, normal level - Avalanche rated - Qualified according to JEDEC1) for target applications - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G IPB037N06N3 G IPI040N06N3 G Product Summary IPP040N06N3 G V DS R DS(on),max (SMD) ID 60 V 3.7 mΩ 90 A previous engineering sample codes: IPP04x N06N IPI04x N06N IPB04x N06N IPP040N06N3 G Package Marking PG-TO263-3 037N06N PG-TO262-3 040N06N PG-TO220-3 040N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 165 m J Gate source...