Datasheet Summary
Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features
- for sync. rectification, drives and dc/dc SMPS
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- N-channel, normal level
- Avalanche rated
- Qualified according to JEDEC1) for target applications
- Pb-free plating; RoHS pliant
- Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G
Product Summary V DS R DS(on),max (SMD) ID 60 3.7 90 V mΩ A previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N
IPP040N06N3 G
Package Marking
PG-TO263-3 037N06N
PG-TO262-3 040N06N
PG-TO220-3 040N06N
Maximum ratings, at T j=25 °C, unless...
