IPB037N06N3 - Power Transistor

This page provides the datasheet information for the IPB037N06N3, a member of the IPB037N06N3G Power Transistor family.

Datasheet Summary

Features

for sync. rectification, drives and dc/dc SMPS.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
N-channel, normal level.
Avalanche rated.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB037N06N3
Manufacturer	Infineon
File Size	509.99 KB
Description	Power Transistor
Datasheet	IPB037N06N3 Datasheet
Additional preview pages of the IPB037N06N3 datasheet.

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Full PDF Text Transcription

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Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G IPB037N06N3 G IPI040N06N3 G Product Summary IPP040N06N3 G V DS R DS(on),max (SMD) ID 60 V 3.

Published: Oct 2, 2020 |