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Infineon Technologies Electronic Components Datasheet

IPB041N04N Datasheet

Power Transistor

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Type
!"#$%!&3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G
IPB041N04N G
40 V
4.1 mW
80 A
Package
Marking
PG-TO263-3
041N04N
PG-TO220-3
041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=80 A, R GS=25 W
Value
Unit
80
A
80
400
80
60
mJ
±20
V
Rev. 1.2
page 1
2009-12-17


Infineon Technologies Electronic Components Datasheet

IPB041N04N Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP041N04N G
IPB041N04N G
Value
Unit
94
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm² cooling area4)
-
-
1.6 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
40
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=45 µA
2
-
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
-V
4
1 µA
V DS=40 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100 nA
Drain-source on-state resistance5) R DS(on) V GS=10 V, I D=80 A
-
3.3
4.1 mW
Gate resistance
RG
-
1.6
-W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
50
100
-S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 1.2
page 2
2009-12-17


Part Number IPB041N04N
Description Power Transistor
Maker Infineon
PDF Download

IPB041N04N Datasheet PDF






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