IPB041N04NG
IPB041N04NG is Power-Transistor manufactured by Infineon.
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 100% Avalanche tested
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G IPB041N04N G
40 V 4.1 m W 80 A
Package Marking
PG-TO263-3 041N04N
PG-TO220-3 041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
I D,pulse I AS E AS V GS
T C=25 °C T C=25 °C I D=80 A, R GS=25 W
Value
Unit
60 m J
±20
Rev. 1.2 page 1
2009-12-17
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol...
