IPB041N04N Datasheet | Infineon

Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC1) for target applications - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 100% Avalanche tested - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID Type IPB041N04N G IPP041N04N G IPP041N04N G IPB041N04N G 40 V 4.1 m W 80 A Package Marking PG-TO263-3 041N04N PG-TO220-3 041N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=80 A, R GS=25 W Value Unit 60 m J ±20 Rev. 1.2 page 1 2009-12-17 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol...