IPB051NE8NG Datasheet - Infineon

Power-Transistor

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qua

IPB051NE8NG

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Power-transistor.

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IPB051NE8NG Power-Transistor Infineon

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