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IPB051NE8NG Datasheet Power-Transistor

Manufacturer: Infineon

Overview: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor.

Download the IPB051NE8NG datasheet PDF. This datasheet also includes the IPB051NE8N variant, as both parts are published together in a single manufacturer document.

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Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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