Infineon Technologies IPB073N15N5
MOSFET
FEATURES
● Excellent gate charge x RDS(on) product (FOM)● Very low on-resistance RDS(on)
● Very low reverse recovery charge (Qrr)
● 175 °C operating temperature
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1) for target application
● Ideal for high-frequency switching and synchronous rectification
● Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max (TO263) 7.3 mΩ ID 114 A Qrr 96 nC D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type / Ordering Code IPB073N15N5 Package PG-TO 263 Marking 073N15N5 Related Links - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2016-03-17 OptiMOSª5 Power-Transistor, 150 V IPB073N15N5 Table of Contents
DESCRIPTION
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