Part IPB600N25N3
Description Power Transistor
Category Transistor
Manufacturer Infineon
Size 629.07 KB
Infineon

IPB600N25N3 Overview

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 60 mW 25 A
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Halogen-free according to IEC61249-2-21