IPB600N25N3
IPB600N25N3 is Power Transistor manufactured by Infineon.
- Part of the IPB600N25N3G comparator family.
- Part of the IPB600N25N3G comparator family.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 60 m W 25 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
- Ideal for high-frequency switching and synchronous rectification
Type
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
Package Marking
PG-TO263-3 600N25N
PG-TO220-3 600N25N
PG-TO262-3 600N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=25 A, R GS=25 W dv /dt
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
25 18 100 210 10 ±20 136 -55 ... 175 55/175/56
Unit A m J k V/µs V W °C
Rev. 2.3 page 1
2011-07-14
IPB600N25N3 G IPP600N25N3 G IPI600N25N3...
