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IPB600N25N3G - Power Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB600N25N3G
Manufacturer Infineon Technologies
File Size 629.07 KB
Description Power Transistor
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IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 250 V 60 mW 25 A Type IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Package Marking PG-TO263-3 600N25N PG-TO220-3 600N25N PG-TO262-3 600N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode d
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