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IPB600N25N3 Datasheet Power Transistor

Manufacturer: Infineon

Overview: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 60 mW 25 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

IPB600N25N3G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo IPB600N25N3G Power Transistor Infineon Technologies
INCHANGE Logo IPB600N25N3G N-Channel MOSFET INCHANGE

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