Datasheet Details
| Part number | IPC173N10N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 2.64 MB |
| Description | MOSFET |
| Download | IPC173N10N3 Download (PDF) |
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| Part number | IPC173N10N3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 2.64 MB |
| Description | MOSFET |
| Download | IPC173N10N3 Download (PDF) |
|
|
|
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP045N10N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 4.51) 5.762 x 3.0 V mΩ mm2 Thickness 220 µm Drain Gate Source Type/OrderingCode IPC173N10N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min.
100 2 - Values Typ.
Max.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC173N10N3 DataSheet Rev.2.
| Part Number | Description |
|---|---|
| IPC171N04N | MOSFET |
| IPC100N04S4-02 | Power-Transistor |
| IPC100N04S5-1R2 | Power-Transistor |
| IPC100N04S5-1R7 | Power-Transistor |
| IPC100N04S5-1R9 | Power-Transistor |
| IPC100N04S5-2R8 | Power-Transistor |
| IPC100N04S5L-1R1 | Power-Transistor |
| IPC100N04S5L-1R5 | Power-Transistor |
| IPC100N04S5L-1R9 | Power-Transistor |
| IPC100N04S5L-2R6 | Power-Transistor |