Datasheet Details
| Part number | IPC300N15N3R |
|---|---|
| Manufacturer | Infineon |
| File Size | 769.89 KB |
| Description | MOSFET |
| Download | IPC300N15N3R Download (PDF) |
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| Part number | IPC300N15N3R |
|---|---|
| Manufacturer | Infineon |
| File Size | 769.89 KB |
| Description | MOSFET |
| Download | IPC300N15N3R Download (PDF) |
|
|
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•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP075N15N3G1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 150 7.52) 6x5 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC300N15N3R Package Chip Marking not defined RelatedLinks - 1) IPP075N15N3 G dynamic characterization does not include the internal added RG 2) packaged in a P-TO220-3-1 (see ref.
product) Final Data Sheet 2 Rev.2.6,2015-09-02 OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS Min.
150 2 13.6 - Values Typ.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N15N3R DataSheet Rev.2.
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