IPD068P03L3 - Power-Transistor

Infineon

Download the IPD068P03L3 datasheet PDF. This datasheet also covers the IPD068P03L3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

single P-Channel in DPAK.
Qualified according JEDEC1) for target.

📥 Download Datasheet

IPD068P03L3 power-transistor by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IPD068P03L3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IPD068P03L3
Manufacturer	Infineon
File Size	498.06 KB
Description	Power-Transistor
Datasheet	IPD068P03L3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IPD068P03L3	N-Channel MOSFET	INCHANGE
IPD068P03L3G	Power-Transistor	Infineon Technologies
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IPD068N10N3G	Power-Transistor	Infineon Technologies
IPD060N03L	N-Channel MOSFET	INCHANGE

Other Datasheets by Infineon

Part Number	Description
IPD068N10N3	Power-Transistor
IPD060N03L	MOSFET
IPD06N03LAG	Power Transistor
IPD06N03LZG	Power-Transistor
IPD06P004N	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management • Halogen-free according to IEC61249-2-21 IPD068P03L3 G Product Summary VDS RDS(on),max IDD VGS = 10V VGS = 4.5V -30 V 6.8 mW 11.