IPD068P03L3G
IPD068P03L3G is Power-Transistor manufactured by Infineon.
Opti MOSTM P3 Power-Transistor
Features
- single P-Channel in DPAK
- Qualified according JEDEC1) for target applications
- 175 °C operating temperature
- 100% Avalanche tested
- Pb-free; Ro HS pliant, halogen free
- applications: power management
- Halogen-free according to IEC61249-2-21
IPD068P03L3 G
Product Summary
VDS RDS(on),max
VGS = 10V VGS = 4.5V
-30 V 6.8 m W 11.0 -70 A
PG-TO252-3
Type IPD068P03L3 G
Package
Marking
PG-TO252-3 068P03L
Lead free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D T C=25 °C T C=100 °C
I D,pulse T C=25 °C2) E AS I D=-70 A, R GS=25 W V GS P tot T C=25 °C T j, T stg
ESD class
JESD22-A114...
