• Part: IPD068P03L3
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 498.06 KB
Download IPD068P03L3 Datasheet PDF
Infineon
IPD068P03L3
IPD068P03L3 is Power-Transistor manufactured by Infineon.
- Part of the IPD068P03L3G comparator family.
Opti MOSTM P3 Power-Transistor Features - single P-Channel in DPAK - Qualified according JEDEC1) for target applications - 175 °C operating temperature - 100% Avalanche tested - Pb-free; Ro HS pliant, halogen free - applications: power management - Halogen-free according to IEC61249-2-21 IPD068P03L3 G Product Summary VDS RDS(on),max VGS = 10V VGS = 4.5V -30 V 6.8 m W 11.0 -70 A PG-TO252-3 Type IPD068P03L3 G Package Marking PG-TO252-3 068P03L Lead free Yes Packing non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature T C=25 °C T C=100 °C I D,pulse T C=25 °C2) E...