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IPD082N10N3 Datasheet Power-Transistor

Manufacturer: Infineon

Download the IPD082N10N3 datasheet PDF. This datasheet also includes the IPD082N10N3G variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPD082N10N3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.2 mΩ 80 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPD082N10N3 N-Channel MOSFET INCHANGE
Infineon Technologies Logo IPD082N10N3G Power-Transistor Infineon Technologies

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