The IPD082N10N3 is a Power-Transistor.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD082N10N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low .
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.2 mΩ 80 A * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target applicati. |
| Part Number | IPD082N10N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤8.2mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Ideal for high-frequency switching and synchronous rectification *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P. |
| Seller | Inventory | Price Breaks | Buy |
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| Avnet | 2500 | 2500+ : 0.63573 USD 5000+ : 0.6262 USD 10000+ : 0.61666 USD 20000+ : 0.60713 USD |
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| Newark | 253 | 1+ : 2.58 USD 10+ : 1.66 USD 25+ : 1.48 USD 50+ : 1.31 USD |
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| Newark | 0 | 2500+ : 1.08 USD 5000+ : 1.05 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD082N10N3G | Infineon | Power-Transistor |