• Part: IPD082N10N3
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 542.90 KB
IPD082N10N3 Datasheet (PDF) Download
Infineon
IPD082N10N3

Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO
  • ID 100 V 8.2 mΩ 80 A
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification