IPD082N10N3 - Power-Transistor

This page provides the datasheet information for the IPD082N10N3, a member of the IPD082N10N3G Power-Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.2 mΩ 80 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPD082N10N3
Manufacturer	Infineon
File Size	542.90 KB
Description	Power-Transistor
Datasheet	IPD082N10N3 Datasheet
Additional preview pages of the IPD082N10N3 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 252) ID 100 V 8.

Published: Sep 30, 2020 |