IPD100N06S4-03 - Power-Transistor

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested.
Ultra Low RDSon.
Ultra High ID IPD100N06S4-03 Product Summary V DS R DS(on),max ID 60 V 3.5 mΩ 100 A PG-TO252-3-11 Type IPD100N06S4-03 Package Marking PG-TO252-3-11 4N0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Cond.

IPD100N06S4-03 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPD100N06S4-03

Datasheet Details

Part number	IPD100N06S4-03
Manufacturer	Infineon
File Size	160.02 KB
Description	Power-Transistor
Datasheet	IPD100N06S4-03 Datasheet
Additional preview pages of the IPD100N06S4-03 datasheet.

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Full PDF Text Transcription

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon • Ultra High ID IPD100N06S4-03 Product Summary V DS R DS(on),max ID 60 V 3.

Published: May 27, 2015 |