IPD12CN10N Overview
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor.
IPD12CN10N Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- case R thJC
- Thermal resistance, junction