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IPD30N06S4L-23
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
Type IPD30N06S4L-23
Package PG-TO252-3-11
Marking 4N06L23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=15A T C=25°C Value 30 21 120 18 30 ±16
IPD30N06S4L-23 Datasheet
