Datasheet4U Logo Datasheet4U.com

IPD320N20N3 - Power-Transistor

Download the IPD320N20N3 datasheet PDF. This datasheet also covers the IPD320N20N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPD320N20N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPD320N20N3 N-Channel MOSFET INCHANGE
IPD30N03S2L N-Channel MOSFET INCHANGE
IPD30N10S3L-34 N-Channel MOSFET INCHANGE
IPD33CN10N N-Channel MOSFET INCHANGE
IPD350N06L N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPD320N20N3G Power-Transistor
IPD30N03S2L-07 Power-Transistor
IPD30N03S2L-10 Power-Transistor
IPD30N03S2L-20 Power-Transistor
IPD30N03S4L-09 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G 200 V 32 mW 34 A Package Marking PG-TO252-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=34 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot T C=25