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Infineon Technologies Electronic Components Datasheet

IPD60N10S4L-12 Datasheet

Power-Transistor

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OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD60N10S4L-12
Product Summary
V DS
R DS(on),max
ID
100 V
12 mW
60 A
PG-TO252-3-313
TAB
1
3
Type
IPD60N10S4L-12
Package
Marking
PG-TO252-3-313 4N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=30A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
60
43
240
120
40
+/-16
94
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-11-30


Infineon Technologies Electronic Components Datasheet

IPD60N10S4L-12 Datasheet

Power-Transistor

No Preview Available !

IPD60N10S4L-12
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 1.6 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D=1mA
100 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=46µA
1.1 1.6 2.1
Zero gate voltage drain current
I DSS
V DS=100V, V GS=0V
- 0.01 1 µA
V DS=100V, V GS=0V,
T j=125°C2)
-
1 100
Gate-source leakage current
Drain-source on-state resistance
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=4.5V, I D=30A
V GS=10V, I D=60A
- - 100 nA
- 12.3 15 mW
- 9.8 12
Rev. 1.0
page 2
2011-11-30


Part Number IPD60N10S4L-12
Description Power-Transistor
Maker Infineon
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IPD60N10S4L-12 Datasheet PDF






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