• Part: IPD60N10S4L-12
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 129.45 KB
Download IPD60N10S4L-12 Datasheet PDF
IPD60N10S4L-12 page 2
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Datasheet Summary

OptiMOSTM-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 100 V 12 mW 60 A PG-TO252-3-313 1 3 Type IPD60N10S4L-12 Package Marking PG-TO252-3-313 4N10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=30A Avalanche current, single pulse I AS - Gate source...