IPD60N10S4L-12 Description
OptiMOSTM-T2 Power-Transistor.
IPD60N10S4L-12 Key Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
- Gate source voltage
- Power dissipation
- IEC climatic category; DIN IEC 68-1